to-92 to-92 to-92 to-92 plastic-encapsulate plastic-encapsulate plastic-encapsulate plastic-encapsulate transistors transistors transistors transistors a733 a733 a733 a733 transistor (pnp) feature feature feature feature power dissipation maximum maximum maximum maximum ratings ratings ratings ratings (ta=25 unless otherwise noted) symbol symbol symbol symbol parameter parameter parameter parameter value value value value units units units units v v v v cbo cbo cbo cbo collector-base voltage -60 v v v v v ceo ceo ceo ceo collector-emitter voltage -50 v v v v v ebo ebo ebo ebo emitter-base voltage -5 v i i i i c c c c collector current -continuous -100 ma p p p p c c c c collector power dissipation 250 mw t t t t j j j j junction temperature 150 t t t t stg stg stg stg junction and storage temperature -55-150 electrical electrical electrical electrical characteristics characteristics characteristics characteristics (tamb=25 unless otherwise specified) parameter parameter parameter parameter symbol symbol symbol symbol test test test test conditions conditions conditions conditions min min min min typ typ typ typ max max max max unit unit unit unit collector-base collector-base collector-base collector-base breakdown breakdown breakdown breakdown voltage voltage voltage voltage v (br)cbo i c = -50ua,i e =0 -60 v collector-emitter collector-emitter collector-emitter collector-emitter breakdown breakdown breakdown breakdown voltage voltage voltage voltage v (br)ceo i c = -1ma , i b =0 -50 v emitter-base emitter-base emitter-base emitter-base breakdown breakdown breakdown breakdown voltage voltage voltage voltage v (br)ebo i e = -50ua, i c =0 -5 v collector collector collector collector cut-off cut-off cut-off cut-off current current current current i cbo v cb = -60v, i e =0 -0.1 ua emitter emitter emitter emitter cut-off cut-off cut-off cut-off current current current current i ebo v eb = -5 v, i c =0 -0.1 ua dc dc dc dc current current current current gain gain gain gain h fe v ce = -6v, i c = -1ma 90 200 600 collector-emitter collector-emitter collector-emitter collector-emitter saturation saturation saturation saturation voltage voltage voltage voltage v ce (sat) i c = -100ma, i b =-10ma -0.18 -0.3 v base-emitter base-emitter base-emitter base-emitter voltage voltage voltage voltage v be v ce =-6v,i c =-1.0ma -0.58 -0.62 -0.68 v transition transition transition transition frequency frequency frequency frequency f t v ce =-6v,i c =-10ma 100 mhz collector collector collector collector output output output output capacitance capacitance capacitance capacitance c ob v cb =-10v,i e =0,f=1mh z 6 pf noise noise noise noise figure figure figure figure nf v ce =-6v,i c =-0.3ma, rg=10k ? ,f=100h z 20 db classification classification classification classification of of of of hfe hfe hfe hfe rank rank rank rank r q p k range range range range 90-180 135-270 200-400 300-600 to-92 1.emitter 2.collector 3 base 1 2 3 product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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